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Lab Notes for FAFO Semiconductor Processes
Notes from experimenting with our equipment to slowly build up process knowledge for the various semiconductor steps.
Check the FAFO Semiconductor Processes project page for an overview.
This page is a lab notebook. It documents the work done in the lab and our thoughts, theories, and findings related to it. Everything you read here is work in progress and not final results. We believe it is best to have our lab notes out in the open, because it gives more detailed insight into what worked for us and what didn't. Of course you can also use this page to follow our progress!
Day 2026-07-17 (q3k, guests)
Experiments with DC sputter deposition of Cr in 'plasma process' mode and MFC.
Flow now through mass flow controller. Controlled over DE9 port by providing +/-15V and a 0-10V control signal. 10V == 100SCCM.
Process parameters:
- Time: 1min to 4 min.
- Power: 100W to 150W.
- Ar pressure 2-5 * 10^-2 mbar.
- Distance: ~30mm from lower part of holder to upper part of RF (!) sputter head.
Best results so far: (good balance between plasma size and speed) 1-2 min, 100W, 2.6 * 10^-2 mbar (~10SCCM). Higher Ar pressures limited plasma size considerably.
Process used:
- Insert sample, press 'process' or 'cycle'.
- Wait for machine to reach 5*10^-5 or lower.
- Press 'process' and 'hold' shortly after. Ensure hold LED is blinking. Machine will display 0*10^-4 mbar as that's the lower bound of the (pirani?) gauge in process mode.
- Open MFC to 10SCCM (1V on control line).
- Reset the DC PSU interlock on the rack panel. INTLK on DC PSU should light on indicating the PSU is ready to start.
- Start DC PSU at 100W. Wait for plasma to turn blue. Purge (with plasma off) for a few minutes first if line had air in it and plasma is continuously red/pink.
- Swing sample into plasma, start 1 minute timer.
- Stop DC PSU, close MFC.
- Vent.
Tests were performed on Al foil with parameters written down. Test pieces are in the SEM sample box.
Consistency yet to be measured.
